Material and electrical characterization of carbon-doped Ta 2O 5 films for embedded dynamic random access memory applications

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 308-316

  Chu, K ^a   Chang, J P ^a   Steigerwald, M L ^b   Fleming, R M ^b   Opila, R L ^b   Lang, D V ^b   Van Dover, R B ^b   Jones, C D W ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DOPING; CARBON INCORPORATION; DEFECT COMPENSATION; DIELECTRIC LEAKAGE; ELECTRICAL CHARACTERIZATION; EMBEDDED DYNAMIC RANDOM ACCESS MEMORY; FOUR-ORDER; HIGH CONCENTRATION; HOPPING CONDUCTION; LOW CONCENTRATIONS; OPTIMAL CONCENTRATION; PULSED DC; RF-MAGNETRON SPUTTERING; STRUCTURAL CHANGE; SYSTEMATIC STUDY; X RAY PHOTOEMISSION SPECTROSCOPY;

CARBON; CARBON DIOXIDE; DEFECTS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; OPTIMIZATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON OXIDES; TANTALUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CARBON FILMS;

EID: 0036139653     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1418420     Document Type: Article

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