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International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2001, Pages 196-199

Electrical and physical characterization of high-k dielectriclayers

(5) Houssa, M a,b Naili, M b Afanas'ev V V a Heyns, M M b Stesmans, A a

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MOSFET DEVICES; PERMITTIVITY; SILICA; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD);

MOS DEVICES;

EID: 0034854988 PISSN: 19308868 EISSN: None Source Type: Journal
DOI: 10.1109/VTSA.2001.934518 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.