Effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 291-294

  Lucovsky, Gerald ^a   Phillips, James C ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CONSTRAINT THEORY; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON;

BAND OFFSET CONSTRAINTS; GATE DIELECTRICS; HETEROVALENTS;

CMOS INTEGRATED CIRCUITS;

EID: 0033190141     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00391-3     Document Type: Article

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