Design optimization of stacked layer dielectrics for minimum gate leakage currents

Solid-State Electronics

Volumn 44, Issue 12, 2000, Pages 2165-2170

  Zhang, J ^a   Yuan, J S ^a   Ma, Y ^b   Oates, A S ^b  

^a University of Central Florida   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TANTALUM COMPOUNDS; TITANIUM COMPOUNDS;

STACKED LAYER DIELECTRICS;

MOSFET DEVICES;

EID: 0034506413     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00185-4     Document Type: Article

References (12)

1. Iwai H, Momose HS. Ultra-thin gate oxes - performance and reliability. Proc IEDM 1998. No. 7-1.
2. Zhang J, Yuan JS, Ma Y, Oates AS. Direct tunneling and surface roughness effects on C-V characteristics of ultrathin gate CMOS, unpublished data.
3. Lucovsky G. Reaction/annealing pathways for forming ultrathin silicon nitre films for composite oxide nitre gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary MOS devices. J Vac Sci Technol A. 17(4):1999;1340.
4. Ma T.P. Making silicon nitre film a viable gate dielectric. IEEE Trans Electron Dev. 45(3):1998;680.
5. Simmons J.G. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film. J Appl Phys. 34(6):1963;1793.
6. 2/Si structures. Solid-State Electron. 38(8):1995;1465.
7. Vogel E.M., Ahmed K.Z., Hornung B., Henson W.K., McLarty P.K., Lucovsky G., Hauser J.R., Wortman J.J. Modeled tunnel currents for high dielectric constant dielectrics. IEEE Trans Electron Dev. 45(6):1998;1350.
8. Ricco B., Azbel M.Y. Physics of resonant tunneling. The one-dimensional double-barrier case. Phys Rev B. 29(4):1984;1970.
9. Shi Y., Wang X., Ma T.P. Tunneling leakage current in ultrathin (. < 4 nm) nitride/oxide stack dielectrics IEEE Electron Dev Lett. 19(10):1999;388.
10. Weinberg Z.A. On tunneling in metal-oxide-silicon structures. J Appl Phys. 53(7):1982;5042.
11. Cheng B., Cao M., Rao R., Inani A., Voorde P.V., Greene W.M., Stork J.M.C., Yu Z., Zeitzoff P.M., Woo J.C.S. The impact of high-k gate dielectrics and metal gate electrodes on sub-100 nm MOSFET's. IEEE Trans Electron Dev. 46(7):1999;1537.
12. Zhang J, Yuan JS, Ma Y. Modeling short channel effect on high-k and stacked-gate MOSFETs. Solid-State Electron, submitted for publication.