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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1732-1738

Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications

(7) Ulrich, M D a Johnson, R S a Hong, J G a Rowe, J E a Lucovsky, G a Quinton, J S b Madey, T E b

a NORTH CAROLINA STATE UNIVERSITY (United States)

b RUTGERS UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRIC; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SOFT X RAY PHOTOELECTRON SPECTROSCOPY;

TANTALUM ALLOYS;

EID: 0035982805 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1493786 Document Type: Conference Paper

Times cited : (7)

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