Multi-component high-K gate dielectrics for the silicon industry

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 351-359

  Manchanda, L ^a   Morris, M D ^a   Green, M L ^a   Van Dover, R B ^a   Klemens, F ^a   Sorsch, T W ^a   Silverman, P J ^a   Wilk, G ^a   Busch, B ^a   Aravamudhan, S ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

Aluminum oxide and aluminates; Gate dielectric; High K dielectrics; Scaling

Indexed keywords

ALUMINA; GATES (TRANSISTOR); MOSFET DEVICES; PERMITTIVITY; SILICA;

SILICON INDUSTRY;

DIELECTRIC MATERIALS;

EID: 0035498698     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00668-2     Document Type: Article

References (10)

1. The electronic structure of the atomic scale of ultra-thin gate oxides
2. 3 with low leakage and low interface states
3. 3 gate dielectrics with equivalent oxide thickness 0.5-1 nm
4. 3 gate dielectric for ULSI applications
5. 3 gate dielectric
6. Hafnium and zirconium silicates for advanced gate dielectrics
7. Zirconium based gate dielectrics with equivalent oxide thickness less than 1.0 nm, performance of submicron-MOSFET using a Nitride Gate Replacement Process
8. Si-doped aluminates for high temperature metal gate CMOS: Zr-Al-Si-O. A novel gate dielectric for low power applications
9. Aluminum oxide/silicon dioxide, double insulator, MOS structure