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Volumn 79, Issue 4, 1996, Pages 1961-1967
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An analytical moderate inversion drain current model for polycrystalline silicon thin-film transistors considering deep and tail states in the grain boundary
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 1442296225
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.361046 Document Type: Article |
Times cited : (24)
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References (21)
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