Electron localization in band-tail transport of high-mobility poly-Si TFTs

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1125-1129

  Ishida, S ^a   Takaoka, S ^b   Nakagawa, K ^b   Oto, K ^b   Murase, K ^b   Shirai, S ^c   Serikawa, T ^c  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ENERGY GAP; HALL EFFECT; LOW TEMPERATURE PROPERTIES; MAGNETORESISTANCE; QUANTUM THEORY; TEMPERATURE;

BAND TAIL STATES; COULOMB GAP; EFROS-SHKLOVSKII VARIABLE RANGE HOPPING; ELECTRON LOCALIZATION; HIGH MOBILITY POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; QUANTUM INTERFERENCE EFFECT;

THIN FILM TRANSISTORS;

EID: 0030563552     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00061-0     Document Type: Article

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