Electronic transport in microcrystalline silicon controlled by trapping and intra-grain mobility

Journal of Non-Crystalline Solids

Volumn 299, Issue 302, 2002, Pages 365-369

  Vanderhaghen, R ^a   Kasouit, S ^a   De, Martino ^a   Roca, Cabarrocas ^a   Brenot, R ^b   Chu, V ^c   Conde, J P ^d   Liu, F ^e  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b NOKIA RESEARCH CENTER   (United States)

^c INESC   (Portugal)

^d INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^e UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIFFUSION IN SOLIDS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; HOLE MOBILITY;

TIME-RESOLVED MICROWAVE CONDUCTIVITY (TRMC);

SEMICONDUCTING SILICON;

EID: 0036539692     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)00953-X     Document Type: Article

References (10)