Numerical simulation of transient emission from deep level traps in polysilicon thin film transistors

Solid-State Electronics

Volumn 41, Issue 6, 1997, Pages 835-844

  Armstrong, G A ^a   Ayres, J R ^b   Brotherton, S D ^b  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; ERROR ANALYSIS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

TRANSIENT EMISSION;

THIN FILM TRANSISTORS;

EID: 0031164162     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00053-1     Document Type: Article

References (11)

1. Ayres, J. R., J. App. Phys., 1993, 74, 1792.
2. Sah, C. T., Forbes, L., Rosier, L. L. and Tasch Jr, A. F., Solid St. Electron., 1970, 13, 759.
3. Horio, K. T., Yanai, H. and Ikoma, T., IEEE Trans Electron Dev., 1988, 35, 1778.
4. Li, Q. and Dutton, R. W., IEEE Trans Electron Dev., 1991, 38, 1285.
5. Simmons, J. G. and Wei. L. S., Solid St. Electron., 1974, 17, 117.
6. ATLAS software manual, Silvaco International, 1994.
7. Armstrong, G. A., Brotherton, S. D. and Ayres, J. R., Proc. ESSDERC 96, Bologna, 1067.
8. Armstrong, G. A., Brotherton, S. D. and Ayres, J. R., Solid St. Electron., 1996, 39, 1337.
9. Fortunato, G., Meakin, D. B., Migliorato, P. and Le Comber, P. G., Philosophical Magazine B, 1988, 57, 573.
10. Brotherton, S. D., Yares, J. R., McCullough, D. J. and Young, N. D., in Physical and Technical Problems of SOI Structures and Devices, ed. J. P. Collinge. pp. 183-198, Kluwer Academic, Dordrecht, 1995, Proc. NATO Conference on SOI, Ukraine, 1995.
11. Brotherton, S. D., Yares, J. R., McCullough, D. J. and Young, N. D., in Physical and Technical Problems of SOI Structures and Devices, ed. J. P. Collinge. pp. 183-198, Kluwer Academic, Dordrecht, 1995, Proc. NATO Conference on SOI, Ukraine, 1995.