The effect of jumps into distant sites on carrier energy relaxation in a disordered hopping system

Journal of Physics Condensed Matter

Volumn 11, Issue 12, 1999, Pages 2531-2538

  Arkhipov, V I ^a   Emelianova, E V ^a   Adriaenssens, G J ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000236523     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/12/008     Document Type: Article

References (13)

1. Mott N F and Davis E A 1979 Electronic Processes in Non-Crystalline Materials 2nd edn (Oxford: Clarendon)
2. Shklovskii B I and Efros A L 1984 Electronic Properties of Doped Semiconductors (Berlin: Springer)
3. Movaghar B, Ries B and Grünewald M 1986 Phys. Rev. B 34 5574
4. Bässler H 1993 Phys. Status Solidi b 175 15
5. Miller A and Abrahams E 1960 Phys. Rev. 120 745
6. Monroe D 1985 Phys. Rev. Lett. 54 146
7. Arkhipov V I and Bässler H 1993 Phil. Mag. B 68 425
8. Arkhipov V I and Adriaenssens G J 1996 J. Phys.: Condens. Matter 8 7909
9. Arkhipov V I, Iovu M S, Rudenko A I and Shutov S D 1979 Phys. Status Solidi a 54 67
10. Grünewald M and Movaghar B 1989 J. Phys.: Condens. Matter 1 2521
11. Overhof H and Thomas P 1989 Electronic Transport in Hydrogenated Amorphous Semiconductors (Berlin: Springer)
12. Schiff E A 1995 J. Non-Cryst. Solids 190 1
13. Adriaenssens G J and Arkhipov V I 1997 Solid State Commun. 103 541