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Volumn 54, Issue 23, 1996, Pages 16696-16700

Energy-level dynamics of deep gap states in hydrogenated amorphous silicon under illumination

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EID: 0009010492     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.16696     Document Type: Article
Times cited : (7)

References (21)
  • 1
    • 0008132108 scopus 로고
    • F. Zhong and J. D. Cohen, in Amorphous Silicon Technology-1992, edited by M. J. Thompson, Y. Hamakawa, P. G. LeComber, A. Madan, and E. A. Schiff, MRS Symposia Proceedings No. 258 (Materials Research Society, Pittsburgh, 1992), p. 813.
    • (1992) Amorphous Silicon Technology-1992 , pp. 813
    • Zhong, F.1    Cohen, J.2
  • 6
    • 0041911585 scopus 로고
    • G. Schumm, K. Nitsch, M. B. Schubert, and G. H. Bauer, in Amorphous Silicon Technology, edited by A. Madan, M. J. Thompson, P. C. Taylor, P. G. LeComber, and Y. Hamakawa, MRS Symposia Proceedings No. 118 (Materials Research Society, Pittsburgh, 1988), p. 543.
    • (1988) Amorphous Silicon Technology , pp. 543
    • Schumm, G.1    Nitsch, K.2    Schubert, M.3    Bauer, G.4
  • 19
    • 0011628683 scopus 로고
    • K. L. Ngai and Fu-Sui Liu, Phys. Rev. B 24, 1049 (1981).
    • (1981) Phys. Rev. B , vol.24 , pp. 1049
    • Ngai, K.1
  • 21
    • 0000039928 scopus 로고
    • The energy (Formula presented) is mostly dissipated into the phonon spectrum, and only occasionally leads to the structural changes employed in the present model. A similar assumption forms the basis of the model for the Staebler-Wronski effect proposed in M. Stutzmann, W. B. Jackson and C. C. Tsai, Appl. Phys. Lett. 45, 1075 (1984).
    • (1984) Appl. Phys. Lett. , vol.45 , pp. 1075
    • Stutzmann, M.1    Jackson, W.2    Tsai, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.