Barrier-controlled transport in highly doped microcrystalline silicon: Role of interface states

Solid State Phenomena

Volumn 80-81, Issue , 2001, Pages 225-230

  Brehme, S ^a   Kanschat, P ^a   Weis, T ^a   Lips, K ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Electron spin resonance; Hall effect; Interface states; Microcrystalline silicon; Mobility

Indexed keywords

COMPUTER SIMULATION; GRAIN BOUNDARIES; HALL EFFECT; INTERFACES (MATERIALS); PARAMAGNETIC RESONANCE; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THIN FILMS; TRANSPORT PROPERTIES;

HALL EFFECT MEASUREMENTS; INTERFACE STATES; MICROCRYSTALLINE SILICON;

SILICON;

EID: 0034820891     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.80-81.225     Document Type: Conference Paper

References (12)