Structure and transport properties of integrated distributed electron cyclotron resonance grown micro-crystalline silicon

Journal of Non-Crystalline Solids

Volumn 231, Issue 3, 1998, Pages 268-272

  Bulkin, P ^a   Brenot, R ^a   Drevillon B ^a   Vanderhaghen, R ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; ELLIPSOMETRY; STRUCTURE (COMPOSITION); SUBSTRATES; THIN FILM TRANSISTORS;

ACTIVATION ENERGY MEASUREMENT; MICROCRYSTALLINE SILICON; TIME RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENT;

SEMICONDUCTING SILICON;

EID: 0032141386     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00451-7     Document Type: Article

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