Dangling-bond defect state creation in microcrystalline silicon thin-film transistors

Applied Physics Letters

Volumn 77, Issue 5, 2000, Pages 750-752

  Wehrspohn, R B ^a,c   Powell, M J ^a   Deane, S C ^a   French, I D ^a   Roca I Cabarrocas, P ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000212153     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127107     Document Type: Article

References (9)

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6. B. Stannowski, A. M. Brockhoff, A. Nascetti, and R. E. I. Schropp, J. Non-Cryst. Solids (to be published).
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9. A. M. Marmorstein, A. T. Voutsas, and R. Solanki, Solid-State Electron. 43, 305 (1999).