Effects of bandwidth limitations on the localized state distribution calculated from transient photoconductivity data

Journal of Applied Physics

Volumn 83, Issue 9, 1998, Pages 4782-4787

  Webb, D P ^a   Main, C ^b   Reynolds, S ^b   Chan, Y C ^a   Lam, Y W ^a   O'Leary, S K ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ARSENIC COMPOUNDS; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; ELECTRONIC DENSITY OF STATES; FOURIER TRANSFORMS; INTEGRAL EQUATIONS; PLASMA APPLICATIONS; SILICON WAFERS;

ARSENIC TRISELENIDE; LOCALIZED STATE DISTRIBUTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TRANSIENT PHOTOCONDUCTIVITY;

PHOTOCONDUCTIVITY;

EID: 0032074211     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367270     Document Type: Article

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