Method for the determination of bulk and interface density of states in thin-film transistors

Journal of Applied Physics

Volumn 89, Issue 11 I, 2001, Pages 6453-6458

  Lui, O K B ^a   Tam, S W B ^a   Migliorato, P ^a,b   Shimoda, T ^c  

^a Epson Cambridge Laboratory   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356834     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1361244     Document Type: Article

References (12)

1. E. P. Raynes, Proceedings of the 16th International Display Research Conference Eurodisplay '96, The Society for Information Displays, Birmingham, United Kingdom, 1996, p. 7.
2. T. Suzuki, Y. Osaka, and M. Hirose, Jpn. J. Appl. Phys., Part 2 21, L159 (1982).
3. G. Fortunato and P. Migliorato, Appl. Phys. Lett. 49, 1025 (1986).
4. G. Fortunato, D. B. Meakin, P. Migliorato, and P. G. LeComber, Philos. Mag. B 57, 573 (1988).
5. K. J. Kim and O. Kim, Thin Film Transistor Technologies III, edited by Y. Kuo (The Electrochemical Society, New York, 1997), p. 280.
6. J. R. Ayres, J. Appl. Phys. 74, 1787 (1993).
7. H. C. DeGraff, M. Huybers, and J. G. DeGroot, Solid-State Electron. 25, 67 (1982).
8. O. K. B. Lui, M. J. Quinn, S. W. B. Tam, T. M. Brown, P. Migliorato, and H. Ohshima, IEEE Trans. Electron Devices 45, 213 (1998).
9. P. Migliorato, S. W. B. Tam, and O. K. B. Lui, and T. Shimoda, J. Appl. Phys. 89, 6449 (2001).
10. MEDICI, Technology Modeling Associates, two-dimensional device simulation program, version 2.3 (1997).
11. S. Inoue, M. Matsuo, K. Kitawada, S. Takenaka, S. Higashi, T. Ozawa, Y. Matsueda, T. Nakazawa, and H. Ohshima, Proceedings of the 15th International Display Research Conference - Asia Display '95, 1995, p. 339.
12. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (1981).