Voltage induced photoluminescence quenching in porous silicon revisited

Applied Physics Letters

Volumn 78, Issue 6, 2001, Pages 763-765

  Reshotko, M R ^a   Balberg, I ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012863007     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1345837     Document Type: Article

References (22)

1. For a recent collection of review papers see, Light Emission in Silicon: From Physics to Devices, edited by D. J. Lockwood, Semiconductors and Semimetals, Vol. 49 (Academic, San Diego, 1998).
2. For more detailed suggestions see, for example, Q.-S. Li and R.-C. Fang, in Porous Silicon, edited by Z. C. Feng and R. Tsu (World Scientific, Singapore, 1994), p. 235; Y. Kanemitsu, ibid., p. 363.
3. For more detailed suggestions see, for example, Q.-S. Li and R.-C. Fang, in Porous Silicon, edited by Z. C. Feng and R. Tsu (World Scientific, Singapore, 1994), p. 235; Y. Kanemitsu, ibid., p. 363.
4. See, for example, Z. Y. Xu, M. Gal, and M. Gross, Appl. Phys. Lett. 60, 1375 (1992); C. Wang, J. M. Perz, F. Gaspari, M. Plumb, and S. Zukotynski, ibid. 62, 2676 (1993); O. K. Andersen and E. Veje, Phys. Rev. B 53, 15643 (1996).
5. See, for example, Z. Y. Xu, M. Gal, and M. Gross, Appl. Phys. Lett. 60, 1375 (1992); C. Wang, J. M. Perz, F. Gaspari, M. Plumb, and S. Zukotynski, ibid. 62, 2676 (1993); O. K. Andersen and E. Veje, Phys. Rev. B 53, 15643 (1996).
6. See, for example, Z. Y. Xu, M. Gal, and M. Gross, Appl. Phys. Lett. 60, 1375 (1992); C. Wang, J. M. Perz, F. Gaspari, M. Plumb, and S. Zukotynski, ibid. 62, 2676 (1993); O. K. Andersen and E. Veje, Phys. Rev. B 53, 15643 (1996).
7. G. Amato, L. Brunetto, A. M. Rossi, and A. Parisini, Thin Solid Films 276, 51 (1996).
8. For recent works and references see, I. Balberg, Philos. Mag. B 80, 691 (2000); I. Bloom and I. Balberg, Appl. Phys. Lett. 74, 1427 (1999).
9. For recent works and references see, I. Balberg, Philos. Mag. B 80, 691 (2000); I. Bloom and I. Balberg, Appl. Phys. Lett. 74, 1427 (1999).
10. J. I. Pankove, Optical Processes in Semiconductors (Prentice-Hall, Englewood Cliffs, NJ, 1971).
11. J. A. Kash, E. E. Mendez, and H. Morkoc, Appl. Phys. Lett. 46, 173 (1985), and references therein.
12. N. Koshida and H. Koyama, Appl. Phys. Lett. 60, 347 (1992); T. Oguro, H. Koyama, T. Ozaki, and N. Koshida, J. Appl. Phys. 81, 1407 (1997).
13. N. Koshida and H. Koyama, Appl. Phys. Lett. 60, 347 (1992); T. Oguro, H. Koyama, T. Ozaki, and N. Koshida, J. Appl. Phys. 81, 1407 (1997).
14. H. Koyama, T. Oguro, and N. Koshida, Appl. Phys. Lett. 62, 8 (1993); H. Koyama and N. Koshida, J. Lumin. 57, 233 (1993); T. Ozaki, T. Oguro, H. Koyama, and N. Koshida, Jpn. J. Appl. Phys. 34, 946 (1995).
15. H. Koyama, T. Oguro, and N. Koshida, Appl. Phys. Lett. 62, 8 (1993); H. Koyama and N. Koshida, J. Lumin. 57, 233 (1993); T. Ozaki, T. Oguro, H. Koyama, and N. Koshida, Jpn. J. Appl. Phys. 34, 946 (1995).
16. H. Koyama, T. Oguro, and N. Koshida, Appl. Phys. Lett. 62, 8 (1993); H. Koyama and N. Koshida, J. Lumin. 57, 233 (1993); T. Ozaki, T. Oguro, H. Koyama, and N. Koshida, Jpn. J. Appl. Phys. 34, 946 (1995).
17. J. T. Lue, K. Y. Lo, S. K. Ma, C. L. Chen, and C. S. Chang, Solid State Commun. 86, 593 (1993).
18. T. Ozakai, M. Araki, S. Yoshimura, H. Koyama, and N. Koshida, J. Appl. Phys. 76, 1986 (1994).
19. B. M. Kostishko and L. I. Gonchar, JETP Lett. 66, 382 (1997).
20. K. Jahn, R. Carius, and W. Fuhs, J. Non-Cryst. Solids 97,98, 575 (1987).
21. T. Burch, P. P. Craig, C. Hedrick, T. A. Kitchens, J. L. Budnik, J. A. Cannon, J. I. Budnick, M. Lipsicas, and D. Mattis, Phys. Rev. Lett. 23, 1444 (1969).
22. A. C. Warren, J. Non-Cryst. Solids 4, 613 (1970).