Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

Journal of Applied Physics

Volumn 89, Issue 11 I, 2001, Pages 6265-6271

  Kamiya, T ^a,b,c   Nakahata, K ^a   Tan, Y T ^b,c   Durrani, Z A K ^b,c   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356471     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1368164     Document Type: Article

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