The transport mechanism in micro-crystalline silicon

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 992-995

  Overhof, H ^a   Otte, M ^a   Schmidtke, M ^a   Backhausen, U ^b   Carius, R ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Conductivity; Hall mobility; Transport mechanism

Indexed keywords

AMORPHOUS MATERIALS; COMPOSITION EFFECTS; COMPUTATIONAL METHODS; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; GRAIN SIZE AND SHAPE; HALL EFFECT; PERCOLATION (SOLID STATE); SEMICONDUCTOR DOPING; THERMAL EFFECTS;

HALL MOBILITY; MICROCRYSTALLINE MATERIALS;

SEMICONDUCTING SILICON;

EID: 0032068753     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00258-0     Document Type: Article

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