Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 440-442

  Cheng, I Chun ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CRYSTALLINE STRUCTURE; FIELD-EFFECT MOBILITIES; FIELD-EFFECT STRUCTURE; LOW TEMPERATURES; N-CHANNEL DEVICES; NANOCRYSTALLINE SILICON (NC-SI:H); NC-SI:H; SEED LAYER; SUBSTRATE TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; HOLE MOBILITY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

NANOCRYSTALLINE SILICON;

EID: 79956054766     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1435798     Document Type: Article

References (25)

1. S. M. Gates, Mater. Res. Soc. Symp. Proc. 467, 843 (1997). mrs MRSPDH 0272-9172
2. C. S. McCormick, C. E. Weber, J. R. Abelson, and S. M. Gates, Appl. Phys. Lett. 70, 226 (1997). apl APPLAB 0003-6951
3. H. Gleskova, S. Wagner, and Z. Suo, Mater. Res. Soc. Symp. Proc. 508, 73 (1998). mrs MRSPDH 0272-9172
4. H. Gleskova and S. Wagner, IEEE Electron Device Lett. 20, 473 (1999). edl EDLEDZ 0741-3106
5. A. Sazonov and A. Nathan, J. Vac. Sci. Technol. A 18, 780 (2000). jva JVTAD6 0734-2101
6. C. S. Yang, L. L. Smith, C. V. Arthur, and G. N. Parsons, J. Vac. Sci. Technol. B 18, 683 (2000). jvb JVTBD9 0734-211X
7. P. M. Smith, P. G. Carey, and T. W. Sigmon, Appl. Phys. Lett. 70, 342 (1997). apl APPLAB 0003-6951
8. P. G. Carey, P. M. Smith, S. D. Theiss, and P. Wickboldt, J. Vac. Sci. Technol. A 17, 1946 (1999). jva JVTAD6 0734-2101
9. Z. Bao, Y. Feng, A. Dodabalapur, V. R. Raju, and A. J. Lovinger, Chem. Mater. 6, 1299 (1997). cma CMATEX 0897-4756
10. C. J. Drury, C. M. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw, Appl. Phys. Lett. 73, 108 (1998). apl APPLAB 0003-6951
11. M. G. Kane, J. Campi, M. S. Hammond, F. P. Cuomo, B. Greening C. D. Sheraw, J. A. Nichols, D. J. Gundlach, J. R. Huang, C.-C. Huang, L. Jia, H. Klauk, and T. N. Jackson, IEEE Electron Device Lett. 21, 534 (2000). edl EDLEDZ 0741-3106
12. M. Bonse, D. B. Thomasson, H. Klauk, D. J. Gundlach, and T. N. Jackson, Tech. Dig. IEDM 249 (1998).
13. J. Meier, R. Flückiger, H. Keppner, and A. Shah, Appl. Phys. Lett. 65, 860 (1994). apl APPLAB 0003-6951
14. Y. Chen and S. Wagner, Appl. Phys. Lett. 75, 1125 (1999). apl APPLAB 0003-6951
15. P. Alpuim, V. Chu, and J. P. Conde, J. Appl. Phys. 86, 3812 (1999). jap JAPIAU 0021-8979
16. P. Alpuim, V. Chu, and J. P. Conde, J. Vac. Sci. Technol. A 19, 2328 (2001). jva JVTAD6 0734-2101
17. I.-C. Cheng, S. Wagner, S. Bae and S. J. Fonash, Mater. Res. Soc. Symp. Proc. 664, A26.1 (2001). mrs MRSPDH 0272-9172
18. P. Roca i Cabarrocas, N. Layadi, T. Heitz, B. Drevillon, and I. Solomon, Appl. Phys. Lett. 66, 3609 (1995). apl APPLAB 0003-6951
19. J. Koh, A. S. Ferlauto, P. I. Rovira, C. R. Wronski, and R. W. Collins, Appl. Phys. Lett. 75, 2286 (1999). apl APPLAB 0003-6951
20. J. Kočka, H. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrček, P. Fojtík, I. Pelant, and A. Fejfar, Solid State Phenom. 80-81, 213 (2000); ssq DDBPE8 1012-0394
21. J. Kočka, A. Fejfar, V. Vorlicek, H. Stuchlíková, and J. Stuchlík, Mater. Res. Soc. Symp. Proc. 557, 483 (1999). mrs MRSPDH 0272-9172
22. R. Platz and S. Wagner, Appl. Phys. Lett. 73, 1236 (1998). apl APPLAB 0003-6951
23. I.-C. Cheng, S. Wagner, and M. Mulato, Mater. Res. Soc. Symp. Proc. 609, A31.2 (2000). mrs MRSPDH 0272-9172
24. A. T. Krishnan, S. Bae, and S. J. Fonash, IEEE Electron Device Lett. 22, 399 (1999). edl EDLEDZ 0741-3106
25. The channel dimensions are W/L:180 μm/45 μm (280°C p-channel), 160 μm/40 μm (150°C p-channel), and 240 μm/40 μm (150°C n-channel).