A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I-ESD

Microelectronics Reliability

Volumn 45, Issue 2, 2005, Pages 323-340

  Voldman, Steven H ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; ELECTRIC EQUIPMENT PROTECTION; ELECTROSTATICS; HETEROJUNCTION BIPOLAR TRANSISTORS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

ELECTROSTATIC DISCHARGE (ESD); ON-CHIP ESD PROTECTION; RADIO FREQUENCY; SILICON GERMANIUM TECHNOLOGY;

ELECTRIC DISCHARGES;

EID: 11344291343     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.10.017     Document Type: Conference Paper

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