-
1
-
-
0005346036
-
-
P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftmann, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
-
(1997)
J. Appl. Phys.
, vol.81
, pp. 6031
-
-
Stolk, P.A.1
Gossmann, H.-J.2
Eaglesham, D.J.3
Jacobson, D.C.4
Rafferty, C.S.5
Gilmer, G.H.6
Jaraiz, M.7
Poate, J.M.8
Luftmann, H.S.9
Haynes, T.E.10
-
3
-
-
0030389382
-
Technical Digest
-
IEEE, Piscataway, NJ
-
L. D. Lanzerotti, J. C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, Technical Digest, International Electron Device Meeting (IEEE, Piscataway, NJ, 1996), p. 249.
-
(1996)
International Electron Device Meeting
, pp. 249
-
-
Lanzerotti, L.D.1
Sturm, J.C.2
Stach, E.3
Hull, R.4
Buyuklimanli, T.5
Magee, C.6
-
4
-
-
84886448135
-
Technical Digest
-
IEEE, Piscataway, NJ
-
H. J. Osten, G. Lippert, D. Knoll, R. Barth, B. Heinemann, H. Rücker, and P. Schley, Technical Digest, International Electron Device Meeting (IEEE, Piscataway, NJ, 1997), p. 803.
-
(1997)
International Electron Device Meeting
, pp. 803
-
-
Osten, H.J.1
Lippert, G.2
Knoll, D.3
Barth, R.4
Heinemann, B.5
Rücker, H.6
Schley, P.7
-
5
-
-
0001666794
-
-
R. Scholz, U. Gösele, J.-Y. Huh, and T. Y. Tan, Appl. Phys. Lett. 72, 200 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 200
-
-
Scholz, R.1
Gösele, U.2
Huh, J.-Y.3
Tan, T.Y.4
-
6
-
-
0001029984
-
-
in edited by J. C. Mikkelsen, Jr., J. S. Pearton, J. W. Corbett, and S. J. Pennycook Materials Research Society, Pittsburgh, PA
-
U. Gösele, in Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelsen, Jr., J. S. Pearton, J. W. Corbett, and S. J. Pennycook (Materials Research Society, Pittsburgh, PA, 1986), p. 419.
-
(1986)
Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon
, pp. 419
-
-
Gösele, U.1
-
8
-
-
0002427970
-
-
in edited by G. E. Murch and A. S. Nowick Academic, Orlando, FL
-
W. Frank, U. Gösele, H. Mehrer, and A. Seeger, in Diffusion in Crystalline Solids, edited by G. E. Murch and A. S. Nowick (Academic, Orlando, FL, 1984), p. 63.
-
(1984)
Diffusion in Crystalline Solids
, pp. 63
-
-
Frank, W.1
Gösele, U.2
Mehrer, H.3
Seeger, A.4
-
10
-
-
34047164707
-
Technical Digest
-
IEEE, Piscataway, NJ
-
M. R. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, W. M. Coughram, Jr., I. C. Kizilyalli, and M. J. Thoma, Technical Digest, International Electron Device Meeting (IEEE, Piscataway, NJ, 1992), p. 923.
-
(1992)
International Electron Device Meeting
, pp. 923
-
-
Pinto, M.R.1
Boulin, D.M.2
Rafferty, C.S.3
Smith, R.K.4
Coughram Jr., W.M.5
Kizilyalli, I.C.6
Thoma, M.J.7
-
11
-
-
0002734525
-
-
in edited by F. F. Y. Wang North-Holland, Amsterdam, The Netherlands
-
R. B. Fair, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North-Holland, Amsterdam, The Netherlands, 1981), p. 315.
-
(1981)
Impurity Doping Processes in Silicon
, pp. 315
-
-
Fair, R.B.1
-
12
-
-
21544445850
-
Technical Digest
-
in IEEE, Piscataway, NJ
-
H. Rücker, B. Heinemann, W. Röpke, G. Fischer, G. Lippert, H. J. Osten, and R. Kurps, in Technical Digest, International Electron Device Meeting (IEEE, Piscataway, NJ, 1997), p. 281.
-
(1997)
International Electron Device Meeting
, pp. 281
-
-
Rücker, H.1
Heinemann, B.2
Röpke, W.3
Fischer, G.4
Lippert, G.5
Osten, H.J.6
Kurps, R.7
-
13
-
-
0000778916
-
-
N. E. B. Cowern, K. T. F. Janssen, G. F. A. van de Walle, and D. J. Gravensteijn, Phys. Rev. Lett. 65, 2434 (1990).
-
(1990)
Phys. Rev. Lett.
, vol.65
, pp. 2434
-
-
Cowern, N.E.B.1
Janssen, K.T.F.2
Van De Walle, G.F.A.3
Gravensteijn, D.J.4
-
14
-
-
0001552493
-
-
H. J. Osten, M. Kim, K. Pressel, and P. Zaumseil, J. Appl. Phys. 80, 6711 (1996).
-
(1996)
J. Appl. Phys.
, vol.80
, pp. 6711
-
-
Osten, H.J.1
Kim, M.2
Pressel, K.3
Zaumseil, P.4
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