The effect of deep trench isolation, trench isolation and sub-collector doping on the electrostatic discharge (ESD) robustness of radio frequency (RF) ESD STI-bound Pwell diodes in BiCMOS silicon germanium technology

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages

  Voldman, Steven H ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; GERMANIUM;

COLLECTOR DOPING; COMBINED EFFECT; DEEP TRENCH ISOLATION; DIODE STRUCTURE; RADIO FREQUENCIES; SHALLOW TRENCH ISOLATION; SILICON-GERMANIUM TECHNOLOGY; TRENCH ISOLATION;

SEMICONDUCTING SILICON;

EID: 84945207434     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. S. Voldman et al, "Retrograde Well and Epitaxial Thickness Optimization for Shallow-and Deep-Trench Collar Merged Isolation and Node Trench (MINT) SPT Cell and CMOS Logic Technology," International Electron Device Meeting (IEDM) Technical Digest, 1992, pp.811-815.
2. S. Voldman, "Optimization of MeV Retrograde Wells for Advanced Logic and Microprocessor/PowerPC and Electrostatic Discharge (ESD)," Invited Talk, Smart and Economic Device and Process Designs for ULSI Using MeV Implant Technology Seminar: SEMICON West, SEMICON West GENUS Seminar, San Francisco, 1994.
3. S. Voldman and G. Gerosa, "Mixed Voltage Interface ESD Protection Circuits for Advanced Microprocessors in Shallow Trench and LOCOS Isolation CMOS Technology," International Electron Device Meeting (IEDM) Technical Digest, December 1994, pp. 811-815.
4. S. Voldman, N. Schmidt, R. Johnson., L. Lanzerotti, A. Joseph, C. Brennan, J. Dunn, D. Harame, P. Juliano, E. Rosenbaum, and B. Meyerson, "Electrostatic Discharge Characterization of Epitaxial Base Silicon Germanium Heterojunction Bipolar Transistors," EOS/ESD Symposium, Sept. 2000, pp. 239-251.
5. R. Joy and E. Schlig, "Thermal properties of very fast transistors," IEEE Transactions on Electron Devices, Vol. 17, (8), 1970, pp.586-594.
6. D. Walkey, et al., "Prediction of thermal resistance in trench isolated bipolar device structures," Proceedings of the Bipolar Circuit Technology Meeting, 1998, pp.207-210.
7. J. S. Rieh, et al., "Structural Dependence of the Thermal Resistance of Trench-Isolated Bipolar Transistor Model," Bipolar Circuit Technology Meeting, Sept. 2002.
8. S. Voldman, et al., "The Influence of Process and Design on the ESD robustness of ESD structures and Silicon Germanium heterojunction bipolar transistors in a BiCMOS SiGe Technology," International Reliability Physics Symposium, April 2003.