Electrostatic discharge (ESD) protection of Giant Magneto-resistive (GMR) recording heads with a Silicon Germanium technology

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 2004, Pages

  Voldman, Steven ^a   Luo, Sam ^b   Nomura, Calvin ^b   Vannorsdel, Kevin ^b   Feilchenfeld, Natalie ^b  

^a IBM MICROELECTRONICS   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-CMOS; ELECTROSTATIC DISCHARGE PROTECTION; ESD PROTECTION; EXPERIMENTAL STUDIES; GIANT MAGNETORESISTIVE HEADS; MOSFETS; PASSIVE ELEMENTS; PROTECTION LEVEL; RECORDING HEAD; SCHOTTKY DIODES; SILICON-GERMANIUM TECHNOLOGY; TURN ON VOLTAGE;

BICMOS TECHNOLOGY; ELECTROSTATIC DISCHARGE; GERMANIUM; MAGNETIC HEADS; MAGNETIC RECORDING; MAGNETOS; PASSIVE NETWORKS; SCHOTTKY BARRIER DIODES;

ELECTROSTATIC DEVICES;

EID: 77950845127     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EOSESD.2004.5272583     Document Type: Conference Paper

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