High current Transmission Line Pulse (TLP) and ESD characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 175-183

  Ronan, B ^a   Voldman, S ^b   Lanzerotti, L ^b   Rascoe, J ^b   Sheridan, D ^b   Rajendran, K ^b  

^a PRINCETON UNIVERSITY   (United States)

^b IBM   (United States)

Author keywords

Electrostatic discharge (ESD); Silicon germanium; Silicon germanium carbon; Transmission line pulse (TLP)

Indexed keywords

CARBON; CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTROSTATICS; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS;

ELECTROSTATIC DISCHARGES (ESD); TRANSMISSION LINE PULSE (TLP);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036088526     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996632     Document Type: Article

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