Variable-trigger voltage ESD Power Clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fMAX) Silicon Germanium Heterojunction Bipolar Transistor with Carbon incorporation

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 52-61

  Voldman, Steven H ^a  

^a IBM   (United States)

Author keywords

Circuits; Clamps; CMOS technology; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Power supplies; Radio frequency; Silicon germanium; Voltage

Indexed keywords

BICMOS TECHNOLOGY; CLAMPING DEVICES; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTRIC POWER SYSTEMS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTIONS; NETWORKS (CIRCUITS); SILICON; SILICON ALLOYS;

CMOS TECHNOLOGY; GERMANIUM SILICON ALLOY; POWER SUPPLY; RADIO FREQUENCIES; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84948734726     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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