Low-voltage diode-configured SiGe:C HBT triggered ESD power clamps using a raised extrinsic base 200/285 GHz (fT/fMAX) SiGe:C HBT device

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 2004, Pages

  Voldman, Steven H ^a   Gebreselasie, Ephrem G ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS SIGE TECHNOLOGY; CMOS TECHNOLOGY; ESD PROTECTION; LOW VOLTAGES; LOW-VOLTAGE; POWER CLAMPS; SIGE HBTS; SIGE:C-HBT; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CLAMPING DEVICES; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; GERMANIUM; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77950803879     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EOSESD.2004.5272633     Document Type: Conference Paper

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