Selective Epitaxy Base Transistor (SEBT)

IEEE Electron Device Letters

Volumn 9, Issue 5, 1988, Pages 259-261

  Burghartz, J N ^a   Ginsberg, B J ^a   Mader, S R ^a   Chen, Tze Chiang ^a   Harame, David L ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - DOPING;

DOUBLE-PLAY SELF-ALIGNED STRUCTURE; DOUBLE-POLY SELF-ALIGNED PROCESSES; SELECTIVE EPITAXY BASE TRANSISTOR (SEBT);

TRANSISTORS, BIPOLAR;

EID: 0024016046     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.709     Document Type: Article

References (8)

1. A. E. Michel et al., “Anomalous diffusion of boron implanted into silicon along the [100] direction”, to be published in Appl. Phys. Lett.
2. T. Sugii et al., “Thin-base bipolar technology by low-temperature photoepitaxy”, in Proc. 1987 Symp. VLSI Technology (Karuizawa, Japan), May 18-21, 1987, pp. 35-36.
3. G. P. Li et al., “An advanced high performance trench-isolated self-aligned bipolar technology”, IEEE Trans. Electron Devices, vol. ED-34, pp. 2246-2254, 1987.
4. A. Ishitani et al., “Selective silicon epitaxial growth for device-isolation technology”, Microelectron. Eng., vol. 4, pp. 3-33, 1986.
5. S. Nagao et al., “Application of selective silicon epitaxial growth for CMOS technology”, IEEE Trans. Electron Devices, vol. ED-33, pp. 1738-1744, 1986.
6. B. Ginsberg et al., “Low temperature selective epitaxy using SiCl4 at reduced pressure”, in Extended Abstr. Fall Meeting Electrochem. Soc. (Honolulu, HI), 1987, pp. 991-992.
7. H. M. Liaw and G. J. Seiter, “Silicon selective epitaxy for high-speed pedestal-type bipolar devices”, in Proc. 10th Conf. Chemical Vapor Deposition, Electrochem. Soc. (Honolulu, HI), 1987, 317-333.
8. H. Stork et al., “High performance operation of Si bipolar transistors at liquid nitrogen temperature”, in IEDM Tech. Dig. (Washington DC), 1987.