The contribution of vacancies to carbon out-diffusion in silicon

Applied Physics Letters

Volumn 74, Issue 3, 1999, Pages 392-394

  Scholz, R F ^a   Werner, P ^a   Gosele U ^a   Tan, T Y ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001759052     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123081     Document Type: Article

References (20)

1. R. C. Newman and J. Wakefield, J. Phys. Chem. Solids 19, 230 (1961).
2. F. Rollert, N. A. Stolwijk, and H. Mehrer, Mater. Sci. Forum 38-41, 753 (1989).
3. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
4. H. Rücker, B. Heinemann, W. Röpke, G. Fischer, G. Lippert, H. J. Osten, and R. Krups, Technical Digest, International Conference Simulates on Semiconductor Processes and Devices (IEEE, Piscataway, NJ, 1997), p. 281.
5. R. Scholz, U. Gösele, J.-Y. Huh, and T. Y. Tan, Appl. Phys. Lett. 72, 200 (1998).
6. H.-J. Gossmann, T. E. Haynes, P. A. Stolk, D. C. Jacobson, G. H. Gilmer, J. M. Poate, H. S. Luftman, T. K. Mogi, and M. O. Thompson, Appl. Phys. Lett. 71, 3862 (1997).
7. T. Y. Tan and U. Gösele, Appl. Phys. A: Solids Surf. 37, 1 (1985).
8. R. B. Fair and P. N. Papas, J. Electrochem. Soc. 122, 1241 (1975).
9. H. Rücker, B. Heinemann, W. Röpke, R. Kurps, D. Krüger, G. Lippert, and H. J. Osten, Appl. Phys. Lett. 73, 1682 (1998).
10. P. Werner, H. Gossmann, D. C. Jacobson, and U. Gösele, Appl. Phys. Lett. 73, 2465 (1998).
11. A. K. Tipping and R. C. Newman, Semicond. Sci. Technol. 2, 315 (1987).
12. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B 52, 16542 (1995).
13. H. Bracht, E. E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81, 393 (1998).
14. M. Tang, L. Colombo, J. Zhu, and T. Diaz de la Rubia, Phys. Rev. B 55, 14279 (1997).
15. H. Zimmermann, Defect Diffus. Forum 153-155, 111 (1998).
16. A. Giese, H. Bracht, J. T. Walton, and N. A. Stolwijk, Mater. Res. Soc. Symp. Proc. 527, 395 (1998).
17. T. Sinno, R. A. Brown, W. Ammon, and E. Dornberger, J. Electrochem. Soc. 145, 302 (1998).
18. G. D. Watkins, J. R. Troxell, and A. P. Chatterjee, in Defects and Radiation Effects in Semiconductors 1978, edited by J. H. Abbmy (Institute of Physics Bristol, 1979), p. 16.
19. J. W. Corbett, G. D. Watkins, and R. S. McDonald, Phys. Rev. A 135, 1381 (1964).
20. P. Warren, J. Mi, F. Overney, and M. Dutoit, J. Cryst. Growth 157, 414 (1995).