Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 310-316

  Voldman, S ^a   Juliano, P ^b   Johnson, R ^a   Schmidt, N ^a   Joseph, A ^a   Furkay, S ^a   Rosenbaum, E ^b   Dunn, J ^a   Harame, D ^a   Meyerson, B ^c  

^a IBM RESEARCH   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CRITICAL CURRENTS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISCHARGES; ELECTROSTATICS; FAILURE ANALYSIS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE TESTING;

ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICES; ELECTROTHERMAL SIMULATION; TRANSMISSION LINE PULSE (TLP) METHOD; WUNSCH-BELL PLOT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033732439     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2000.843932     Document Type: Article

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