Emitter base junction ESD reliability of an epitaxial base silicon germanium heterojunction bipolar transistor

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2001, Pages 79-84

  Voldman, S H ^a   Lanzerotti, L D ^a   Johnson, R ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIGITAL CIRCUITS; ELECTRIC RESISTANCE; ELECTROSTATICS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SUBSTRATES;

DOPANT-IMPLANT CHANNELING; ELECTROSTATIC DISCHARGES; EMITTER-BASE JUNCTION; EPITAXIAL DEPOSITION; HOT-PROCESS DEFICIENCIES; SALICIDE LOCATION; SILICON GERMANIUM ALLOY FILM; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR;

ELECTRIC DISCHARGES;

EID: 0034832579     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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