Influence of process and device design on ESD sensitivity of a Silicon Germanium heterojunction bipolar transistor

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 362-370

  Voldman, Steven H ^a   Lanzerotti, Louis D ^a   Johnson, Robb A ^a  

^a IBM   (United States)

Author keywords

Cutoff frequency; Electrostatic discharge; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Process design; Radio frequency; Robustness; Silicon germanium; Stress

Indexed keywords

BICMOS TECHNOLOGY; CUTOFF FREQUENCY; DESIGN; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTIONS; PROCESS DESIGN; ROBUSTNESS (CONTROL SYSTEMS); SILICON; SILICON ALLOYS; STRESSES;

DEVICE PERFORMANCE; EMITTER-BASE DESIGN; GERMANIUM SILICON ALLOY; MEASUREMENTS OF; PROCESS VARIATION; RADIO FREQUENCIES; SILICON GERMANIUM; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84948947073     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (36)

1. U. Konig, "SiGe and GaAs as Competitive Technologies for RF-Applications," Bipolar Circuits and Technology Meeting, pp. 87-92, Minneapolis, MN, 1998
2. H. Kroemer, "Two Integral Relations Pertaining To The Electron Transport Through A Bipolar Transistor With A Nonuniform Energy Gap In The Base Region," Solid-State Electron. Vol. 28, pp.ll0l-ll03, Nov. 1985
3. H. Kroemer, "Heterostructure Bipolar Transistors and Integrated Circuits," Proceedings of the IEEE, Vol. 70, No.1, pp. 1325, Jan. 1982
4. S.J. Jeng, D. R. Greenberg, M. Longstreet, G. Hueckel, D. L. Harame, and D. Jadus, " Lateral Scaling of the Self-Aligned Extrinsic Base in SiGe HBTs," IEEE Bipolar Circuitffechnology Meeting,pp. 15-18, 1996
5. J. Jang, E. Kan, R. Dutton, and T. Arnborg, "Improved Performance and Thermal Stability of Interdigitated Power RF Bipolar Transistor with Nonlinear Base Ballasting," IEEE Bipolar Circuitffechnology Meeting, pp. 143-146, 1997
6. D. Walkey, M. Schroter, and S. Voinigescu, "Predictive Modeling of Lateral Scaling in Bipolar Transistors," IEEE Bipolar Circuit Technology Meeting, pp.74-77, 1995
7. D. Richey, and J. Cressler, "Scaling Issues and Ge Profile Optimization in Advanced UHV/CVD SiGe HBTs," IEEE Bipolar Circuitffechnology Meeting, 19-23, 1996
8. H. Tran, M. Schroter, D. Walkey, D. Marchesan, and T.J. Smy, "Simultaneous Extraction of Thermal and Emitter Series Resistances in Bipolar Transistors," IEEE Bipolar Circuit Technology Meeting, pp. 170174, 1997
9. J. M Early, " Structure Dependent Gain-Band Product of Junction Triode Transistors," Proceedings of the IRE, pp. 1924-1927, December
10. L. E. Larson, " Silicon Bipolar Transistor Design and Modeling for Microwave Integrated Circuits Applications," IEEE Bipolar Circuit Technology Meeting, pp. 142-148, 1997
11. S. Voldman, "The State of the Art of Electrostatic Discharge Protection: Physics, Technology, Circuits, Designs, Simulation and Scaling," Bipolar/BiCMOS Circuits and Technology Meeting Symposium, pp. 19-31, Sept 27-29, 1998
12. S. Voldman et aI., "Electrostatic Discharge and High Current Pulse Characterization of Epitaxial Base Silicon Germanium Heterojunction Bipolar Transistors," International Reliability Physics Symposium, March 2000
13. S. Voldman, N. Schmidt, R. Johnson., L. Lanzerotti, A. Joseph, C. Brennan, J. Dunn, D. Harame, P. Juliano, E. Rosenbaum, and B. Meyerson, "Electrostatic Discharge Characterization of Epitaxial Base Silicon Germanium Heterojunction Bipolar Transistors," EOS/ESD Symposium, pp. 239251, Sept. 2000
14. S. Voldman et aI., "ESD Robustness of a Silicon Germanium BiCMOS Technology," Bipolar/BiCMOS Circuits and Technology Meeting Symposium, September, 2000
15. S. Voldman, L.D. Lanzerotti, and R. Johnson, "Emitter Base Junction ESD Reliability of an Epitaxial Base Silicon Germanium Heterojunction Transistor," International Physical and Failure Analysis of Integrated Circuits, July 2001
16. C. Richier et aI., "Investigation on Different ESD Protection Strategies Devoted to 3.3 V RF Applications (2 GHz) in a 0.18 urn CMOS Process, EOS/ESD Symposium, pp. 251-260, September 2000
17. D. Harame et aI., "Si/SiGe Epitaxial-Base Transistors-Part I: Materials, Physics, and Circuits," IEEE Trans. on Elec. Devices, Vol. 42, No.3, pp. 455-468, March 1995
18. D. Harame et aI., "Si/SiGe Epitaxial-Base Transistors-Part II: Process Integration and Analog Applications," IEEE Trans. on Elec. Dev., Vol. 42, No.3, pp. 469-482, March 1995
19. D.L. Harame et aI., "Epitaxial-Base Transistors With Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) Epitaxial/Enhanced Profile Control For Greater Flexibility In Device Design," IEEE Electron Dev Letters, Vol. 10, No.4, pp.156-158, April 1989
20. G.L. Patton et aI., "Silicon Germanium Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy," IEEE Electron Device Letters Vol. 9, No.4, pp.165-167, April 1988
21. D.L. Harame, "Optimization Of SiGe HBT Technology For High Speed Analog And Mixed Signal Applications," IEDM, pp. 874876, Dec. 1993
22. D.L. Harame et aI., "A High Performance Epitaxial SiGe-Base ECL BiCMOS Technology," IEDM, pp.19-22, Dec. 1992
23. J.N. Burghartz et aI., "Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology," IEEE Electron Device Letters, Vol. 11, No.7, pp.288-290, July 1990
24. C.T. Kirk, "A Theory Of Transistor Cutoff Frequency (ft) Falloff At High Current Densities," IRE Trans. Elec. Dev. Vol. ED-9. pp. 164-174, Mar. 1962
25. J.H. Comfort, E.F. Crabbe, G.L. Patton, J.M.C. Stork, J.Y.C. Sun and B.S. Meyerson, "Impact Ionization Reduction in SiGe HBT's," Device Research Conference, pp.21-24, June 1990
26. W.M. Webster, "On Variation Of Junction Transistor Current Amplification With Emitter Current," Proc. IRE, Vo1.42, pp.914-920, June 1954
27. J.M.C. Stork, "Bipolar Transistor Scaling For Minimum Switching Delay And Energy Dissipation," IEDM, pp. 550-553, Dec. 1988
28. J.L. Moll and J.M. Ross, "The Dependence Of Transistor Parameters On The Distribution Of Base Layer Resistivity," Proc. IRE, Vol. 44, p.72, 1956
29. J.R. Hauser, "The Effects Of Distributed Base Potential On Emitter Current Injection Density And Effective Base Resistance For Stripe Transistor Geometries," IEEE Trans. Elec. Dev., VoI.ED-ll, pp.238-242,May 1967
30. E.F. Crabbe et aI., "The Impact Of Nonequilibrium Transport On Breakdown And Transit Time In Bipolar Transistors," IEDM Tech. Dig. pp. 463-466, 1990
31. E. Zanoni et aI., "Extension Of Impact Ionization Multiplication Coefficient Measurements To High Electric Fields In Advanced Si BJTs," IEEE Electron Device Letters, Vol. 14, No.2, pp.69-71, 1993
32. D.C. Wunsch, and R.R. Bell, "Determination Of Threshold Voltage Levels Of Semiconductor Diodes And Transistors Due To Pulsed Voltages," IEEE Trans. on Nuclear Science, Vol. NS-15, No.6, pp. 244-259, Dec. 1968
33. V. M. Dwyer, A. J. Franklin, and D.S. Campbell, " Thermal Failure in Semiconductor Devices," pp 553-560, Solid State, 1989
34. C. Chang, "Novel Low Power HBT Technology, UCSD PhD. Thesis, 1995
35. L. Besser, "Avoiding RF Oscillation," Applied Microwave and Wireless, pp. 44-55, Spring 1995
36. L.Lanzerotti, "Suppression of Boron OutDiffusion in Silicon Germanium HBT by Carbon Incorporation," International Electron Device Meeting Technical Digest, pp.249-252, 1996