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Volumn 2002-January, Issue , 2002, Pages 92-100

Test methods, test techniques and failure criteria for evaluation of ESD degradation of analog and radio frequency (RF) technology

Author keywords

Degradation; Electrostatic discharge; Radio frequency; Testing

Indexed keywords

DEGRADATION; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; RADIO WAVES; TESTING;

EID: 84948743535     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (20)

References (9)
  • 1
    • 0016573979 scopus 로고
    • The RF Pulse Susceptibility of UHF Transistors
    • November
    • J. Whalen, "The RF Pulse Susceptibility of UHF Transistors," IEEE Transaction of Electromagnetic Compatibility," Vol. EMC-17, pp.220-225, November 1975.
    • (1975) IEEE Transaction of Electromagnetic Compatibility , vol.EMC-17 , pp. 220-225
    • Whalen, J.1
  • 2
    • 0005973237 scopus 로고
    • Square Pulse and RF Pulse Overstressing of UHF Transistors
    • J. Whalen and H. Domingos, "Square Pulse and RF Pulse Overstressing of UHF Transistors," EOS/ESD Symposium, pp.140-146, 1979.
    • (1979) EOS/ESD Symposium , pp. 140-146
    • Whalen, J.1    Domingos, H.2
  • 4
    • 84948947073 scopus 로고    scopus 로고
    • Influence of Process and Device Design on ESD Sensitivity of a Silicon Germanium Heterojunction Bipolar Transistor
    • S. Voldman, L.D. Lanzerotti, and R. A. Johnson, "Influence of Process and Device Design on ESD Sensitivity of a Silicon Germanium Heterojunction Bipolar Transistor," EOS/ESD Symposium Proceedings, 2001.
    • (2001) EOS/ESD Symposium Proceedings
    • Voldman, S.1    Lanzerotti, L.D.2    Johnson, R.A.3
  • 5
    • 0036088526 scopus 로고    scopus 로고
    • High Current Transmission Line Pulse (TLP) and ESD Characterization of a Silicon Germanium Heterojunction Bipolar Transistor with Carbon Incorporation
    • April
    • B. Ronan, S. Voldman, L. Lanzerotti, J. Rascoe, D. Sheridan, and K. Rajendran, "High Current Transmission Line Pulse (TLP) and ESD Characterization of a Silicon Germanium Heterojunction Bipolar Transistor with Carbon Incorporation," International Reliability Physics Symposium (IRPS), April 2002.
    • (2002) International Reliability Physics Symposium (IRPS)
    • Ronan, B.1    Voldman, S.2    Lanzerotti, L.3    Rascoe, J.4    Sheridan, D.5    Rajendran, K.6
  • 7
    • 33947300917 scopus 로고
    • The measurement of dielectrics in the time domain
    • H. Fellner-Fidegg, "The measurement of dielectrics in the time domain," Jour. of Phys. Chem., Vol. 73, pp.613-623, 1969.
    • (1969) Jour. of Phys. Chem. , vol.73 , pp. 613-623
    • Fellner-Fidegg, H.1
  • 8
    • 1542270931 scopus 로고    scopus 로고
    • Comparative TDR Analysis as a Packaging FA Tool
    • C. Odegard and C. Lambert, "Comparative TDR Analysis as a Packaging FA Tool," ISTFA Proceedings, 1999.
    • (1999) ISTFA Proceedings
    • Odegard, C.1    Lambert, C.2
  • 9
    • 0028494638 scopus 로고
    • Characterization and modeling of multiple line interconnections from TDR measurements
    • Sept.
    • L.A. Hayden and V.K. Tripathi, "Characterization and modeling of multiple line interconnections from TDR measurements," IEEE Trans. On Microwave Theory and Techniques, Vol. 42, pp.1737-1743, Sept. 1994.
    • (1994) IEEE Trans. on Microwave Theory and Techniques , vol.42 , pp. 1737-1743
    • Hayden, L.A.1    Tripathi, V.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.