The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 143-151

  Voldman, S ^a   Lanzerotti, L ^a   Morris, W ^b   Rubin, L ^c  

^a IBM MICROELECTRONICS   (United States)

^b Silicon Engineering Inc   (United States)

^c Axcelis Corporation   (United States)

Author keywords

ESD; Heavily Doped Buried Layer; Latchup; Silicon Germanium (SiGe)

Indexed keywords

ELECTROSTATIC DISCHARGES (ESD); HEAVILY DOPED BURIED LAYER (HDBL) IMPLANTS; LATCHUPS; SILICON GERMANIUM (SIGE);

ELECTRIC DISCHARGES; ELECTRIC RESISTANCE; ELECTROSTATICS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

CMOS INTEGRATED CIRCUITS;

EID: 3042566871     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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