The influence of deep trench and substrate resistance on the latchup robustness in a BiCMOS silicon germanium technology

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 135-142

  Voldman, Steven H ^a   Watson, Anne ^b  

^a IBM MICROELECTRONICS   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Latchup; Silicon Germanium (SiGe); Silicon Germanium Carbon (SiGeC)

Indexed keywords

LATCHUPS; SILICON GERMANIUM (SIGE); SILICON GERMANIUM CARBON (SIGEC);

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; FLIP FLOP CIRCUITS; GAIN MEASUREMENT; SILICON COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3042561385     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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