-
1
-
-
36449001067
-
-
P. A. Stolk, D. J. Easglesham, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 66, 1370 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 1370
-
-
Stolk, P.A.1
Easglesham, D.J.2
Gossmann, H.-J.3
Poate, J.M.4
-
2
-
-
0000301643
-
-
N. E. B. Cowern, A. Cacciato, J. S. Custer, F. W. Saris, and W. Vandervorst, Appl. Phys. Lett. 68, 1150 (1996)
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 1150
-
-
Cowern, N.E.B.1
Cacciato, A.2
Custer, J.S.3
Saris, F.W.4
Vandervorst, W.5
-
3
-
-
0030389382
-
-
IEEE, Piscataway, NJ
-
L. D. Lanzerotti, J. C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, in Technical Digest, International Electron Device Meeting (IEEE, Piscataway, NJ, 1996), p. 249.
-
(1996)
Technical Digest, International Electron Device Meeting
, pp. 249
-
-
Lanzerotti, L.D.1
Sturm, J.C.2
Stach, E.3
Hull, R.4
Buyuklimanli, T.5
Magee, C.6
-
4
-
-
84886448135
-
-
IEEE, Piscataway, NJ
-
H. J. Osten, G. Lippert, D. Knoll, R. Barth, B. Heinemann, H. Rücker, and P. Schley, in Technical Digest, International Electron Device Meeting (IEEE, Piscataway, NJ, 1997), p. 803.
-
(1997)
Technical Digest, International Electron Device Meeting
, pp. 803
-
-
Osten, H.J.1
Lippert, G.2
Knoll, D.3
Barth, R.4
Heinemann, B.5
Rücker, H.6
Schley, P.7
-
5
-
-
0032254786
-
-
IEEE, Piscataway, NJ
-
H. Gossmann, C. Rafferty, G. Hobler, H. Vuong, and D. Jacobson, in Technical Digest, International Electron Device Meeting (IEEE, Piscataway, NJ, 1998), p. 725.
-
(1998)
Technical Digest, International Electron Device Meeting
, pp. 725
-
-
Gossmann, H.1
Rafferty, C.2
Hobler, G.3
Vuong, H.4
Jacobson, D.5
-
6
-
-
0005346036
-
-
P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftmann, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
-
(1997)
J. Appl. Phys.
, vol.81
, pp. 6031
-
-
Stolk, P.A.1
Gossmann, H.-J.2
Eaglesham, D.J.3
Jacobson, D.C.4
Rafferty, C.S.5
Gilmer, G.H.6
Jaraiz, M.7
Poate, J.M.8
Luftmann, H.S.9
Haynes, T.E.10
-
7
-
-
0000077773
-
-
H. Rücker, B. Heinemann, W. Röpke, R. Kurps, D. Krüger, G. Lippert, and H. J. Osten, Appl. Phys. Lett. 73, 1682 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1682
-
-
Rücker, H.1
Heinemann, B.2
Röpke, W.3
Kurps, R.4
Krüger, D.5
Lippert, G.6
Osten, H.J.7
-
8
-
-
0001666794
-
-
R. Scholz, U. Gösele, J.-Y. Huh, and T. Y. Tan, Appl. Phys. Lett. 72, 200 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 200
-
-
Scholz, R.1
Gösele, U.2
Huh, J.-Y.3
Tan, T.Y.4
-
9
-
-
0001759052
-
-
R. F. Scholz, P. Werner, U. Gösele, and T. Y. Tan, Appl. Phys. Lett. 74, 392 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 392
-
-
Scholz, R.F.1
Werner, P.2
Gösele, U.3
Tan, T.Y.4
-
11
-
-
0030673564
-
-
IEEE, Piscataway, NJ
-
C. S. Rafferty in Technical Digest, International Conference on Simulation of Semiconductor Processes and Devices (IEEE, Piscataway, NJ, 1997), p. 1.
-
(1997)
Technical Digest, International Conference on Simulation of Semiconductor Processes and Devices
, pp. 1
-
-
Rafferty, C.S.1
-
12
-
-
0000595313
-
-
C. S. Rafferty, G. H. Gilmer, M. Jraiz, D. Eaglesham, and H.-J. Gossmann, Appl. Phys. Lett. 68, 2395 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2395
-
-
Rafferty, C.S.1
Gilmer, G.H.2
Jraiz, M.3
Eaglesham, D.4
Gossmann, H.-J.5
-
13
-
-
21544480068
-
-
D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 2305
-
-
Eaglesham, D.J.1
Stolk, P.A.2
Gossmann, H.-J.3
Poate, J.M.4
-
14
-
-
0000778916
-
-
N. E. B. Cowern, K. T. F. Janssen, G. F. A. van de Walle, and D. J. Gravensteijn, Phys. Rev. Lett. 65, 2434 (1990).
-
(1990)
Phys. Rev. Lett.
, vol.65
, pp. 2434
-
-
Cowern, N.E.B.1
Janssen, K.T.F.2
Van De Walle, G.F.A.3
Gravensteijn, D.J.4
-
15
-
-
36449007860
-
-
K. J. van Oosturm, P. C. Zalm, W. B. de Boer, D. J. Gravensteijn, and J. W. F. Maes, Appl. Phys. Lett. 61, 1513 (1992).
-
(1992)
Appl. Phys. Lett.
, vol.61
, pp. 1513
-
-
Van Oosturm, K.J.1
Zalm, P.C.2
De Boer, W.B.3
Gravensteijn, D.J.4
Maes, J.W.F.5
-
16
-
-
0001062374
-
-
H.-J. Gossmann, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, T. Boone, and J. M. Poate, Appl. Phys. Lett. 63, 639 (1993).
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 639
-
-
Gossmann, H.-J.1
Rafferty, C.S.2
Luftman, H.S.3
Unterwald, F.C.4
Boone, T.5
Poate, J.M.6
-
18
-
-
21544431744
-
-
P. B. Griffin, S. T. Ahn, W. A. Tiller, and J. D. Plummer, Appl. Phys. Lett. 51, 115 (1987).
-
(1987)
Appl. Phys. Lett.
, vol.51
, pp. 115
-
-
Griffin, P.B.1
Ahn, S.T.2
Tiller, W.A.3
Plummer, J.D.4
-
19
-
-
34047164707
-
-
IEEE, Piscataway, NJ
-
M. R. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, W. M. Coughram, Jr., I. C. Kizilyalli, and M. J. Thoma, in Technical Digest, International Electron Device Meeting (IEEE, Piscataway, NJ, 1992), p. 923.
-
(1992)
Technical Digest, International Electron Device Meeting
, pp. 923
-
-
Pinto, M.R.1
Boulin, D.M.2
Rafferty, C.S.3
Smith, R.K.4
Coughram W.M., Jr.5
Kizilyalli, I.C.6
Thoma, M.J.7
-
20
-
-
0002734525
-
-
edited by F. F. Y. Wang North-Holland, Amsterdam, The Netherlands
-
R. B. Fair, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North-Holland, Amsterdam, The Netherlands, 1981), p. 315.
-
(1981)
Impurity Doping Processes in Silicon
, pp. 315
-
-
Fair, R.B.1
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