Silicon Germanium heterojunction bipolar transistor ESD power clamps and the Johnson Limit

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 324-334

  Voldman, Steven H ^a   Botula, Alan ^a   Hui, David T ^b   Juliano, Patrick A ^c  

^a IBM RESEARCH   (United States)

^b IBM   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Biological system modeling; Clamps; Electric breakdown; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFETs; Radio frequency; Silicon germanium; Testing

Indexed keywords

AMPLIFICATION; BICMOS TECHNOLOGY; BIOLOGICAL SYSTEMS; CLAMPING DEVICES; CUTOFF FREQUENCY; ELECTRIC BREAKDOWN; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; ELECTROSTATICS; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INVERSE PROBLEMS; MOSFET DEVICES; RADIO WAVES; SILICON; SILICON ALLOYS; TESTING; TRANSISTORS; VOLTAGE CONTROL;

BIOLOGICAL SYSTEM MODELING; GERMANIUM SILICON ALLOY; MOSFETS; RADIO FREQUENCIES; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84948974189     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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