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Volumn 45, Issue 2, 2001, Pages 229-233

Modeling of complete suppression of boron out-diffusion in Si1-xGex by carbon incorporation

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARBON; CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS;

EID: 0035247659     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00012-0     Document Type: Article
Times cited : (12)

References (18)
  • 1
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    • The effects of base dopant outdiffusion and undoped SiGe junction spacer layers in Si/SiGe/Si heterojunction bipolar transistors
    • Prinz E.J., Garone P.M., Schwartz P.V., Xiao X., Sturm J.C. The effects of base dopant outdiffusion and undoped SiGe junction spacer layers in Si/SiGe/Si heterojunction bipolar transistors. IEEE Elect Dev Lett. 12:1991;42-44.
    • (1991) IEEE Elect Dev Lett , vol.12 , pp. 42-44
    • Prinz, E.J.1    Garone, P.M.2    Schwartz, P.V.3    Xiao, X.4    Sturm, J.C.5
  • 3
    • 0342757867 scopus 로고    scopus 로고
    • Tailoring dopant diffusion for advanced SiGe: C heterojunction bipolar transistors
    • Rucker H., Heinemann B. Tailoring dopant diffusion for advanced SiGe: C heterojunction bipolar transistors. Solid State Electron. 44:2000;783-789.
    • (2000) Solid State Electron , vol.44 , pp. 783-789
    • Rucker, H.1    Heinemann, B.2
  • 6
    • 21544453240 scopus 로고
    • Reduction of tansient boron diffusion in preamorphized Si by carbon implantation
    • Nishikawa S., Takeda A., Yamaji T. Reduction of tansient boron diffusion in preamorphized Si by carbon implantation. Appl Phys Lett. 60:1992;2270-2272.
    • (1992) Appl Phys Lett , vol.60 , pp. 2270-2272
    • Nishikawa, S.1    Takeda, A.2    Yamaji, T.3
  • 7
    • 0001666794 scopus 로고    scopus 로고
    • Carbon-induced undersaturation of silicon self-interstitials
    • Scholtz R., Gosele U., Huh J.Y., Tan T.Y. Carbon-induced undersaturation of silicon self-interstitials. Appl Phys Lett. 72:1998;200-202.
    • (1998) Appl Phys Lett , vol.72 , pp. 200-202
    • Scholtz, R.1    Gosele, U.2    Huh, J.Y.3    Tan, T.Y.4
  • 8
    • 0001759052 scopus 로고    scopus 로고
    • The contribution of vacancies to carbon out-diffution in silicon
    • Scholtz R., Werner P., Gosele U., Tan T.Y. The contribution of vacancies to carbon out-diffution in silicon. Appl Phys Lett. 74:1999;392-394.
    • (1999) Appl Phys Lett , vol.74 , pp. 392-394
    • Scholtz, R.1    Werner, P.2    Gosele, U.3    Tan, T.Y.4
  • 11
    • 0000872060 scopus 로고    scopus 로고
    • Boron diffusion across silicon-silicon germanium boundaries
    • Lever R.F., Bonar J.M., Willoughby A.F.W. Boron diffusion across silicon-silicon germanium boundaries. J Appl Phys. 83:1998;1988-1994.
    • (1998) J Appl Phys , vol.83 , pp. 1988-1994
    • Lever, R.F.1    Bonar, J.M.2    Willoughby, A.F.W.3
  • 17
    • 0005966274 scopus 로고    scopus 로고
    • Shallow p-type SiGeC layers synthesized by ion implantation of Ge, C, and B in Si
    • Kurata H., Suzuki K., Futasugi T., Yokoyama N. Shallow p-type SiGeC layers synthesized by ion implantation of Ge, C, and B in Si. Appl Phys Lett. 75:1999;1568-1570.
    • (1999) Appl Phys Lett , vol.75 , pp. 1568-1570
    • Kurata, H.1    Suzuki, K.2    Futasugi, T.3    Yokoyama, N.4
  • 18
    • 0001535455 scopus 로고    scopus 로고
    • Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices
    • Osten H.J., Heinemann B., Knoll D., Lippert G., Rucker H. Effects of carbon on boron diffusion in SiGe: principles and impact on bipolar devices. J Vac Sci Tech. B16:1998;1750-1753.
    • (1998) J Vac Sci Tech , vol.16 , pp. 1750-1753
    • Osten, H.J.1    Heinemann, B.2    Knoll, D.3    Lippert, G.4    Rucker, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.