A review of ionizing radiation effects in floating gate memories

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 359-370

  Cellere, Giorgio ^a   Paccagnella, Alessandro ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

MOS memory integrated circuits; Radiation effects; Semiconductor device reliability

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRON ENERGY LEVELS; INTEGRATED CIRCUITS; MOS DEVICES; PHOTONS; RADIATION EFFECTS; RELIABILITY; SEMICONDUCTOR DEVICES; SILICA;

FLOATING GATE MEMORIES; IONIZING RADIATION EFFECTS; MOS MEMORY INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE RELIABILITY;

IONIZING RADIATION;

EID: 11144228941     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.836726     Document Type: Review

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