FGMOS dosimetry: Design and implementation

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2050-2055

  Martin, Mark N ^a   Roth, David R ^a   Garrison Darrin, Ann ^a   McNulty, Peter J ^b   Andreou, Andreas G ^c  

^a JOHNS HOPKINS UNIVERSITY   (United States)

^b CLEMSON UNIVERSITY   (United States)

^c Johns Hopkins University   (United States)

Author keywords

Dosimetry; Floating gate; Radiation effects

Indexed keywords

GATES (TRANSISTOR); IONIZING RADIATION; MOS DEVICES; RADIATION EFFECTS; SENSITIVITY ANALYSIS; SENSORS; SIGNAL PROCESSING;

FLOATING-GATE TRANSISTORS;

DOSIMETRY;

EID: 0035723243     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983171     Document Type: Conference Paper

References (12)

1. A floating-gate MOSFET gamma dosimeter
2. A floating-gate MOSFET dosimeter requiring no external bias supply
3. Solid state microdosimeter for radiation monitoring in spacecraft and avionics
4. Dosimetry based on the erasure of floating-gates in the natural radiation environments in space
5. A multiple input differential amplifier based on charge sharing on a floating-gate MOSFET
6. A single-transistor silicon synapse
7. Translinear circuits in subthreshold mos
8. Systematic MOS transistor mismatch due to fabrication process variations