SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit flash memory

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2000, Pages 96-99

  Roth, D R ^a   Kinnison, J D ^a   Carkhuff, B G ^a   Lander, J R ^a   Bognaski, G S ^a   Chao, K ^a   Swift, G M ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLASH MEMORY; GATES (TRANSISTOR); HEAVY IONS; LOGIC DEVICES; SEMICONDUCTOR DEVICE TESTING;

FLOATING GATE TECHNOLOGY; SINGLE EVENT UPSET; TOTAL IONIZING DOSE;

RADIATION EFFECTS;

EID: 0034506156     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)