TID testing of ferroelectric nonvolatile RAM

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2001, Pages 57-61

  Nguyen, D N ^a   Scheick, L Z ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); DOSIMETRY; ELECTRIC FIELD EFFECTS; FERROELECTRIC MATERIALS; NONVOLATILE STORAGE;

FERROELECTRIC MEMORIES;

RANDOM ACCESS STORAGE;

EID: 0035172649     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A survey of circuit innovations in ferroelectric random-access memories
2. FRAM-the ultimate memory
3. Radiation hardness evaluation of thin film ferroelectric capacitors
4. Total dose radiation effects on Sol-Gel derived PZT thin films