Analysis of carrier traps in Si3N4 in oxide/nitride/oxide for metal/oxide/nitride/oxide/silicon nonvolatile memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1441-1447

  Aozasa, Hiroshi ^a   Fujiwara, Ichiro ^a   Nakamura, Akihiro ^a   Komatsu, Yasutoshi ^a  

^a Sony Corporation Semiconductor Network Company   (Japan)

Author keywords

Attempt to escape frequency; Discharging current transient spectroscopy; MONOS; ONO; Shallow electron trap level; Si3N4; Trap density

Indexed keywords

CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; MATHEMATICAL MODELS; OXIDES; SILICON; SILICON NITRIDE;

DISCHARGING CURRENT TRANSIENT SPECTROSCOPY; SHALLOW ELECTRON TRAP LEVEL; TRAP DENSITY;

ELECTRON TRAPS;

EID: 0032633731     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1441     Document Type: Article

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