Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2375-2382

  Ceschia, M ^a   Paccagnella, A ^a   Cester, A ^a   Scarpa, A ^a   Ghidini, G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CRYSTAL DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ENERGY DISSIPATION; GATES (TRANSISTOR); HOLE TRAPS; IONIZING RADIATION; LEAKAGE CURRENTS; RADIATION EFFECTS;

ELECTRICAL STRESSES; NEUTRAL TRAP DISTRIBUTION; RADIATION INDUCED LEAKAGE CURRENTS (RILC); STRESS INDUCED LEAKAGE CURRENTS (SILC);

MOS CAPACITORS;

EID: 0032306849     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736457     Document Type: Article

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