Ionizing radiation induced leakage current on ultra-thin gate oxides

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1818-1825

  Scarpa, A ^a   Paccagnella, A ^a   Montera, F ^a   Ghibaudo, G ^a   Pananakakis, G ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHARGE CARRIERS; DOSIMETRY; GAMMA RAYS; IRRADIATION; LEAKAGE CURRENTS; MOS DEVICES; ULTRATHIN FILMS;

MOS CAPACITORS; RADIATION INDUCED LEAKAGE CURRENTS (RILC); ULTRATHIN METAL OXIDE SEMICONDUCTOR (MOS) GATE OXIDES;

RADIATION EFFECTS;

EID: 0031357733     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658948     Document Type: Article

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