In-flight observations of multiple-bit upset in DRAMs

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2386-2391

  Swift, Gary M ^a,b   Guertin, Steven M ^a,b  

^a IEEE   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MULTIPLE BIT UPSET; SOLID STATE RECORDER;

ALGORITHMS; APPLICATION SPECIFIC INTEGRATED CIRCUITS; CYCLOTRONS; DYNAMIC RANDOM ACCESS STORAGE; ERROR CORRECTION; HEAVY IONS; IRRADIATION; PROTONS; SPACECRAFT;

RADIATION DAMAGE;

EID: 0034452257     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903781     Document Type: Conference Paper

References (10)

1. Cosmic and terrestrial single event radiation effects in dynamic random access memories
2. Heavy ion/proton test results on high integrated memories
3. Radiation pre-screening of four Mbit dynamic random access memories for space application
4. Solid-state tape recorders: Spaceflight SEU data for SAMPEX and TOMS/meteor-3
5. Observation and prediction of SEU rates in the SOHO satellite
6. Investigation of single-ion multiple-bit upsets in memories on board a space experiment
7. Laboratory tests for single-event effects
8. Characterization of multiple-bit errors from single ion tracks in integrated circuits
9. Anatomy of an in-flight anomaly: Investigation of proton-induced SEE test results for stacked IBM DRAMs
10. Trends in low-power RAM circuit technologies