A model of radiation effects in nitride-oxide films for power MOSFET applications

Solid-State Electronics

Volumn 47, Issue 5, 2003, Pages 775-783

  Raparla, V A K ^a   Lee, S C ^b   Schrimpf, R D ^a   Fleetwood, D M ^a   Galloway, K F ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b MS 177 ^*  (United States)

Author keywords

Composite dielectrics; Metal nitride oxide semiconductor; MNOS; Power MOSFETs; Radiation effects; Total dose effects

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; NITRIDES; OXIDES; RADIATION EFFECTS; X RAYS;

METAL NITRIDE OXIDE SEMICONDUCTOR (MNOS) DEVICES;

MOSFET DEVICES;

EID: 0037406947     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00375-1     Document Type: Article

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