Optical and electrical properties of TiN/n-GaN contacts in correlation with their structural properties

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages 594-601

  Gautier, S ^a   Komninou, Ph ^a   Patsalas, P ^a   Kehagias, Th ^a   Logothetidis, S ^a   Dimitriadis, C A ^a   Nouet, G ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ANNEALING; ELECTRIC CONTACTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; ELLIPSOMETRY; ETCHING; GALLIUM NITRIDE; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

SPECTROSCOPIC ELLIPSOMETRY (SE);

TITANIUM NITRIDE;

EID: 0037495228     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/334     Document Type: Article

References (66)

1. Liu Q Z and Lau S S 1998 Solid-State Electron. 42 677
2. Pearton S J, Zolper J C, Shul R J and Ren F 1999 J. Appl. Phys. 86 1
3. Pearton S J, Ren F, Zhang A P and Lee K P 2000 Mater. Sci. Eng. R 30 55
4. Lin M E, Ma Z, Huang F Y, Fan Z F, Allen L H and Morkoc H 1994 Appl. Phys. Lett. 64 1003
5. Lester L F, Brown J M, Ramer J C, Zhang L, Hersee S D and Zolper J C 1996 Appl. Phys. Lett. 69 2737
6. Ruvimov S, Liliental-Weber Z, Washburn J, Duxstad K J, Haller E E, Fan Z-F, Mohammad S N, Kim W, Botchkarev A E and Morkoc H 1996 Appl. Phys. Lett. 69 1556
7. Luther B P, Mohney S E, Jackson T N, Khan M A, Chen Q and Wang J W 1997 Appl. Phys. Lett. 70 57
8. Gasser S M, Kolawa E and Nicolet M A 1999 J. Electron. Mater. 28 949
9. Kwak J S, Mohney S E, Lin J-Y and Kern R S 2000 Semicond. Sci. Technol. 15 756
10. Tan L S, Prakash S, Ng K M, Ramam A, Chua S J, Wee A T S and Lim S L 2000 Semicond. Sci. Technol. 15 585
11. Lin Y-J and Lee C-T 2000 Appl. Phys. Lett. 77 3986
12. Jang H W, Jeon C M, Kim J K and Lee J-L 2001 Appl. Phys. Lett. 78 2015
13. Lin Y-J, Lee H-Y, Hwang F-T and Lee C-T 2001 J. Electron. Mater. 30 532
14. Pidun M, Karduck P, Mayer J, Heime K, Schineller B and Walther T 2001 Appl. Surf. Sci. 179 213
15. Pelto C M, Chang Y A, Chen Y and Williams R S 2001 Solid-State Electron. 45 1597
16. Luther B P, DeLucca J M, Mohney S E and Karlicek R F 1997 Appl. Phys. Lett. 71 3859
17. Papanicolaou N A, Edwards A, Rao M V, Mittereder J and Anderson W T 2000 J. Appl. Phys. 87 380
18. Ingerly D B, Chen Y, Williams R S, Takeuchi T and Chang Y A 2000 Appl. Phys. Lett. 77 382
19. Guo J D, Lin C I, Feng M S, Pan F M, Chi G C and Lee C T 1996 Appl. Phys. Lett. 68235
20. Ingerly D B, Chang Y A, Perkins N R and Kuech T F 1997 Appl. Phys. Lett. 70 108
21. Burm J, Chu K, Davis W A, Schaff W J, Eastman L F and Eustis T J 1997 Appl. Phys. Lett. 70 464
22. Vassilevski K V, Rastegaeva M G, Babanin A I, Nikitina I P and Dmitriev V A 1997 Mater. Sci. Eng. B 43 292
23. Kim D-W and Baik H K 2000 Appl. Phys. Lett. 77 1011
24. Cao X A, Pearton S J, Donovan S M, Abernathy C R, Ren F, Zolper J C, Cole M W, Zeitouny A, Eizenberg M, Shul R J and Baca A G 1999 Mater. Sci. Eng. B 59 362
25. Lin C F, Cheng H C and Chi G C 2000 Solid-State Electron. 44757
26. Sheu J K, Su Y K, Chi G C, Jou M J, Liu C C and Chang C M 1999 Solid-State Electron. 43 2081
27. Lee C-T, Yu Q-X, Tang B-T, Lee H-Y and Hwang F-T 2001 Appl. Phys. Lett. 78 3412
28. Fan Z, Mohammad S N, Kim W, Aktas O, Botchkarev A E and Morkoc H 1996 Appl. Phys. Lett. 68 1672
29. Lee C T and Kao H W 2000 Appl. Phys. Lett. 76 2364
30. Kachwalla Z, Wiggins J W, Chua S J and Wang W 1999 Phys. Status Solidi a 176 779
31. Boudart B, Trassaert S, Wallart X, Pesant J C, Yaradou O, Theron D, Crosnier Y, Lahreche H and Omnes F 2000 J. Electron. Mater. 29 603
32. Zhao Z M, Jiang R L, Chen P, Xi D J, Yu H Q, Shen B, Zhang R, Shi Y, Gu S L and Zheng Y D 2001 Appl. Phys. Lett. 79 218
33. Wang D-F, Shiwei F, Lu C, Motayed A, Jah M, Mohammad S N, Jones K A and Salamanca-Riba L 2001 J. Appl. Phys. 89 6214
34. Omura Y, Inokawa H and Izumi K 1991 J. Mater. Res. 6 1238
35. Kara T, Yamanoue A, Iio H, Inoue K, Washidzu G and Nakamura S 1991 Japan. J. Appl. Phys. 30 1447
36. Glass R C, Spellman L M, Tanaka S and Davis R F 1992 J. Vac. Sci. Technol. A 10 1625
37. Patsalas P, Charitidis C, Logothetidis S, Dimitriadis C A and Valassiades O 1999 J. Appl. Phys. 86 5296
38. Dimitriadis C A, Lee J I, Patsalas P, Logothetidis S, Tassis D H, Brini J and Kamarinos G 1999 J. Appl. Phys. 85 4238
39. Satta A, Beyer G, Maex K, Elers K, Haukka S and Vantome A 2000 Mater. Res. Soc. Symp. Proc. vol 612 p D651
40. Ishihara S and Hanabusa M 1998 J. Appl. Phys. 84 596
41. Dimitriadis C A, Karakostas Th, Logothetidis S, Kamarinos G, Brini J and Nouet G 1999 Solid-State Electron. 43 1969
42. Ruterana P, Nouet G, Kehagias Th, Komninou Ph, Karakostas Th, di Fort-Poisson M A, Huet F and Morkoc H 1999 Phys. Status Solidi a 176 767
43. Komninou Ph, Dimitrakopoulos G P, Nouet G, Kehagias Th, Ruterana P and Karakostas Th 2000 J. Phys.: Condens. Matter 12 10925
44. Smith L L, Davis R F, Liu R-J, Kim M J and Carpenter R W 1999 J. Mater. Res. 14 1032
45. Wu H Z, Chou T C, Mishra A, Anderson D R, Lampert J K and Gujrathi S C 1990 Thin Solid Films 191 55
46. Patsalas P and Logothetidis S 2001 J. Appl. Phys. 90 4725
47. Foresi J S and Moustakas T D 1993 Appl. Phys. Lett. 62 2859
48. Schuster H and Goebel H 1996 Adv. X-ray Anal. 39 1
49. Savage D E, Kleiner J, Schimke N, Phang Y H, Jankowski T, Jacobs J, Darious R and Lagally M G 1991 J. Appl. Phys. 69 1411
50. Kortright J B 1991 J. Appl. Phys. 70 4286
51. Petalas J, Logothetidis S, Boultadakis S, Alouani M and Wills J M 1996 Phys. Rev. B 52 8082
52. Logothetidis S, Petalas J, Cardona M and Moustakas T D 1994 Phys. Rev. B 50 18017
53. Lambrecht W R, Segall B, Rife J, Hunter W R and Wickeden D K 1995 Phys. Rev. B 51 13516
54. Whetkamp T, Wilmers K, Esser N, Richter W, Ambacher O, Angerer H, Jungk G, Johnson R L and Cardona M 1998 Thin Solid Films 313-314 745
55. Kawashima T, Yoshikawa H, Adachi S, Fuke S and Ohtsuka H 1997 J. Appl. Phys. 82 3528
56. Djurisic A B and Li E H 2001 J. Appl. Phys. 89 273
57. Shalish I, Shapira Y, Burstein L and Salzman J 2001 J. Appl. Phys. 89 390
58. Passlack M, Schubert E F, Hobson W S, Hong M, Moriya N, Chu S N G, Konstandinidis K, Mannaerts J P, Schonnes M L and Zydzik G J 1995 J. Appl. Phys. 77 686
59. Ortiz A, Alonso J C, Andrade E and Urbiola C 2001 J. Electrochem. Soc. 148 F26
60. Aspnes D E 1982 Thin Solid Films 89 249
61. Bruggeman DAG 1935 Ann. Phys., Lpz 24 636
62. Azzam R M and Bashara N M 1977 Ellipsometry and Polarized Light (Amsterdam: North-Holland)
63. Wooten F 1972 Optical Properties of Solids (New York: Academic)
64. Ashcroft N W and Mermin N D 1976 Solid State Physics (Orlando, FL: Saunders College)
65. Luther B P, Mohney S E and Jackson T N 1998 Semicond. Sci. Technol 13 1322
66. Logothetidis S, Meletis E I, Stergioudis G and Adjaottor A A 1999 Thin Solid Films 338 304