Surface states and surface oxide in GaN layers

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 390-395

  Shalish, I ^a,c   Shapira, Yoram ^a   Burstein, L ^a   Salzman, J ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000630729     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1330553     Document Type: Article

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